The era of super semiconductor material GaN (gallium nitride) is opening. It is more resistant to pressure than conventional silicon and GaAs (gallium arsenide) and has become one of the key materials for high-power LEDs . It is favored in the RF field, including Cree, RFMD, and Eudyna and Nitronex to launch GaN for these markets. product. In addition, IR, ST, Fujitsu, Panasonic, and the new EPC (Epson) companies are involved in the GaN device market. iSuppli data predicts that TAM for GaN devices will reach $10.9 billion by 2013, while the potential market value of EPC products will be $7 billion and will grow at an annual rate of 11.1%, said Alex Lidow, co-founder and CEO of the company.
In 2004, Eudyna introduced a depletion-type GaN RF transistor based on a SiC substrate; Nitronex then introduced a silicon-based depletion GaN RF transistor. The first silicon-based GaN power devices introduced by IR at the beginning of the year - the depletion of iP2010 and iP2011. Unlike competing products, EPC has introduced enhanced GaN power transistors based on a standard silicon CMOS process on 150mm wafers. Between the GaN and the silicon substrate, there is an aluminum nitride spacer (see Figure 1).
According to Alex, the most potential market opportunity for its products is to replace power MOSFETs.
Figure 1: EPC's enhanced GaN device structure, which can be fabricated in a standard CMOS process
Interestingly, EPC and Alex's former owner IR (International Rectifier) ​​will dance in the GaN power market and assert that the performance of traditional silicon power MOSFETs has reached its limits. Although GaN is beginning to invade the power MOSFET market, its suppliers will never easily give up the market created in 30 years. Alex believes that within five years, silicon MOSFETs will remain active in the power market.
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