Professor Fujiwara Kanehara, a professor of materials production science at the Graduate School of Engineering, Osaka University, has produced a red LED module using GaN-based semiconductors. Blue LED components and green LED components using GaN-based semiconductors have now reached a practical level, but the red LED components have been prototyped "the world's first" (Fujiwara). If the red LED component is fabricated using a GaN-based semiconductor as in the case of the blue LED component and the green LED component, the three primary colors of RGB can be realized in the same substrate. As a result, the estimation will help achieve LED displays with smaller pixel sizes and higher definition. This time, a red LED module was realized by using GaN added with a rare earth element "Eu" on the light-emitting layer. Previous studies have also been conducted to add Eu to GaN to obtain red light. However, Eu was originally added by ion implantation, and red light was obtained by photoexcitation. Fujiwara's research team added Eu by MOCVD and successfully obtained red light by injecting current. This is the "first time in the world" to obtain red lasers using this method.
When the driving current was 20 mA and the driving voltage was 6 V, the optical output power was 1.3 μW. Although the optical output power is still small, as an LED component, if the electrode structure and the like are further optimized, it is expected that the optical output power can be greatly improved.
When the driving current was 20 mA and the driving voltage was 6 V, the optical output power was 1.3 μW. Although the optical output power is still small, as an LED component, if the electrode structure and the like are further optimized, it is expected that the optical output power can be greatly improved.
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