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inductance
**Measurement Principle:**
This sensor is based on a Wheatstone bridge configuration fabricated on a sapphire epitaxial wafer. It utilizes the piezoresistive effect of silicon to convert pressure into an electrical signal. The sensor consists of two main parts: a sensitive silicon chip and a signal conditioning circuit. When pressure is applied to the chip, it causes a change in the resistance within the bridge, which leads to a variation in the output voltage. This voltage is then amplified by the signal processing unit, and additional compensation for temperature drift and non-linearities is applied. The design also ensures strong resistance to electromagnetic interference, making it highly reliable in various environments.
**Features and Applications:**
The sensor is designed to operate over a wide temperature range, from -40°C to 85°C, ensuring stable performance even in extreme conditions. Its robust construction provides excellent anti-vibration and anti-electromagnetic interference capabilities, as well as high reliability in harsh environments. These features make it ideal for use in critical applications such as fuel pressure monitoring in aviation systems, military equipment, and other high-performance devices where accuracy and durability are essential.
**Output Terminals:**
- **A:** Ground (power supply negative)
- **B:** Signal Output
- **C:** Power Supply +28V
This sensor is widely used in scenarios where precise and consistent pressure measurements are required, especially in environments that are challenging for conventional sensors. Its design ensures long-term stability and minimal maintenance, making it a preferred choice for engineers working in demanding industrial and aerospace applications.
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