inductance
**Measurement Principle:**
This sensor is based on a Wheatstone bridge structure fabricated on a sapphire epitaxial wafer. It utilizes the piezoresistive effect of silicon to convert mechanical pressure into an electrical signal. The device consists of a sensitive silicon chip and an integrated signal processing circuit. When external pressure is applied to the silicon chip, it causes a change in resistance within the Wheatstone bridge, resulting in a voltage output. This output is then amplified by the signal processing circuit, while also undergoing temperature compensation and nonlinear correction to ensure accuracy. Additionally, the sensor is designed with strong anti-electromagnetic interference (EMI) capabilities, making it reliable even in noisy environments.
**Features and Applications:**
The sensor offers a wide operating temperature range (-40°C to 85°C), excellent stability, high resistance to vibration, and strong immunity to electromagnetic interference. These characteristics make it ideal for use in harsh conditions, such as in aerospace and military equipment, where precise fuel pressure or oil level monitoring is critical. Its durability and reliability ensure consistent performance in demanding applications, including aircraft systems, weapons platforms, and other high-stakes environments.
**Output Terminals:**
- **A:** Ground (Power supply negative)
- **B:** Signal output
- **C:** Power supply +28V
This sensor is a robust and versatile solution for pressure measurement in complex and challenging settings, ensuring accurate and stable readings under various operational conditions.
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